Search results for "Subthreshold conduction"
showing 10 items of 16 documents
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions
2019
The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma
Subthreshold low frequency repetitive transcranial magnetic stimulation selectively decreases facilitation in the motor cortex
2002
Objective: To investigate the modulatory effect of a subthreshold low frequency repetitive transcranial magnetic stimulation (rTMS) train on motor cortex excitability. Methods: The study consisted of two separate experiments. Subjects received a 10 min long subthreshold 1Hz rTMS train. In the first experiment, (single pulse paradigm), cortical excitability was assessed by measuring the amplitude of motor evoked potentials (MEPs) before and after the rTMS train. In the second experiment, a paired pulse paradigm was employed. Results: Corticospinal excitability, as measured by the MEP amplitude, was reduced by the rTMS train (experiment 1), with a significant effect lasting for about 10 min a…
Digital information receiver based on stochastic resonance
2003
International audience; An electronic receiver based on stochastic resonance is presented to rescue subthreshold modulated digital data. In real experiment, it is shown that a complete data restoration is achieved for both uniform and Gaussian white noise.
A Low-Power Fully-Mosfet Voltage Reference Generator for 90 nm CMOS Technology
2006
An integrated voltage reference generator, designed for being incorporated in standard 90-nm CMOS technology flash memories, is described in this paper. A fully MOSFET based approach, using also subthreshold operated devices, has been adopted in order to achieve low-voltage and low-power requirements and to overcome the difficulties of conventional band-gap reference circuits. The proposed circuit, based on current signals, internally generates two currents with opposite dependence on temperature. The two currents are added, thus canceling almost completely temperature dependence, and then linearly converted into the output voltage. For a temperature variation between -20degC and 90degC, th…
Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors
2016
The transfer characteristics (ID-VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as-prepared devices and after annealing at different temperatures (T-ann from 150 degrees C to 200 degrees C) under a positive bias ramp (V-G from 0 V to + 20 V). Larger T-ann resulted in a reduced hysteresis of the ID-VG curves (from similar to 11 V in the as-prepared sample to similar to 2.5 V after Tann at 200 degrees C). The field effect mobility (similar to 30 cm(2) V-1 s(-1)) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n-type behaviour in the as-prepared device to the…
Controlling the mode of operation of organic transistors through side chain engineering
2016
Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…
Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
2017
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
2015
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…
Identification of Synaptic Integration Mode in CA3 Pyramidal Neuron Model
2019
International audience; A morphologically realistic and anisotropic model of CA3 pyramidal neuron was developed to determine the synaptic integration modes the neuron is able to perform. Linearity and nonlinearity were identified in different synaptic locations with varying active mechanisms such as the presence of ionic channels in the dendritic arbor and the types of receptors in the synapse. Quantification of synaptic integration was performed using paired-pulse stimulation protocol and subthreshold input/output (sI/O) transformation. Results show that the mode of synaptic integration is location-dependent while the linearity or nonlinearity in the integration is mainly influenced by the…
Resonance properties of different neuronal populations in the immature mouse neocortex
2012
In vivo recordings in the immature neocortex revealed spontaneous and sensory-driven oscillatory activity from delta (0.5-4 Hz) to gamma (30-100 Hz) frequencies. In order to investigate whether the resonance properties of distinct neuronal populations in the immature neocortex contribute to these network oscillations, we performed whole-cell patch-clamp recordings from visually identified neurons in tangential and coronal neocortical slices from postnatal day (P)0-P7 C57Bl/6 mice. Subthreshold resonance was analysed by sinusoidal current injection of varying frequency. All Cajal-Retzius cells showed subthreshold resonance, with an average frequency of 2.6 ± 0.1 Hz (n = 60), which was massiv…